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JWJ > Volume 30(3); 2012 > Article
Journal of KWJS 2012 June;30(3) :26-31.
Published online July 18, 2012.
doi:https://doi.org/10.5781/KWJS.2012.30.3.26
Effect of BOE Wet Etching on Interfacial Characteristics of Cu-Cu Pattern Direct Bonds for 3D-IC Integrations
Jong-Myeong Park, Su-Hyeong Kim, SarahEunkyung Kim, Young-Bae Park



Correspondence:   Published online July 18, 2012
ABSTRACT
  Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at 400℃ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were 4.52 J/㎡, 5.06 J/㎡ and 3.42 J/㎡, respectively, which were lower than 5 J/㎡. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.
Keywords: 3D IC;Wet etching;Cu-Cu bonding;Interfacial adhesion energy;Pattern density
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