Technical Trend of TSV(Through Silicon Via) Filling for 3D Wafer Electric Packaging

Ko, Young-Ki; Ko, Yong-Ho; Bang, Jung-Hwan; Lee, Chang-Woo

doi:2014.32.3.233

J Weld Join > Volume 32(3); 2014 > Article

Special Issue

Journal of Welding and Joining 2014;32(3):233-240.
DOI: https://doi.org/10.5781/JWJ.2014.32.3.19 Published online June 30, 2014.

Technical Trend of TSV(Through Silicon Via) Filling for 3D Wafer Electric Packaging

Young-Ki Ko^*,**, Yong-Ho Ko^*,***, Jung-Hwan Bang^*, Chang-Woo Lee^*,†

Correspondence: Chang-Woo Lee,
Email: cwlee@kitech.re.kr

Abstract

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

Key Words: 3D packaging, TSV, Via filling technology