TSV Filling Technology using Cu Electrodeposition

Kee, Se-Ho; Shin, Ji-Oh; Jung, Il-Ho; Kim, Won-Joong; Jung, Jae-Pil

doi:2014.32.3.225

J Weld Join > Volume 32(3); 2014 > Article

Special Issue

Journal of Welding and Joining 2014;32(3):225-232.
DOI: https://doi.org/10.5781/JWJ.2014.32.3.11 Published online June 30, 2014.

TSV Filling Technology using Cu Electrodeposition

Se-Ho Kee^*, Ji-Oh Shin^*, Il-Ho Jung^**, Won-Joong Kim^*, Jae-Pil Jung^*

Abstract

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

Key Words: Through silicon via, 3D packating, Cu filling, Electrodeposition, Additive