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J Weld Join > Volume 31(3); 2013 > Article
Special Issue
Journal of KWJS 2013;31(3):11-16.
DOI: https://doi.org/10.5781/KWJS.2013.31.3.11    Published online June 30, 2013.
Various Cu Filling Methods of TSV for Three Dimensional Packaging
Myong-Hoon Roh, Jun-Hyeong Lee, Wonjoong Kim, Jae Pil Jung, Hyeong-Tea Kim
Correspondence:  Wonjoong Kim,
Email: wjkim@uos.ac.kr
Abstract
Through-silicon-via (TSV) is a major technology in microelectronics for three dimensional high density packaging. The 3-dimensional TSV technology is applied to CMOS sensors, MEMS, HB-LED modules, stacked memories, power and analog, SIP and so on which can be employed to car electronics. The copper electroplating is widely used in the TSV filling process. In this paper, the various Cu filling methods using the control of the plating process were described in detail including recent studies. Via filling behavior by each method was also introduced.
Key Words: Three dimensional packaging, TSV, Cu electroplating, Functional layer
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