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JWJ > Volume 37(5); 2019 > Article
Journal of Welding and Joining 2019 October;37(5) :482-492.
Published online October 4, 2019.
doi:https://doi.org/10.5781/JWJ.2019.37.5.8
Chip Sinter-Bonding Using Ag-Based Paste for Power Semiconductor Devices
Na Yeon Lee1  , Jong-Hyun Lee1  , Chang-Yong Hyun1 
1Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Korea
Correspondence: Chang-Yong Hyun  Email: cyhyun@seoultech.ac.kr
Received July 16, 2019  Revised July 29, 2019  Accepted August 8, 2019  Published online October 4, 2019
ABSTRACT
Existing Si-based semiconductors are being replaced with wide bandgap materials such as SiC and GaN for more efficient operation in power devices, and this has stimulated extensive research on technologies to form a heat-tolerant joint. Sinter-bonding technologies using silver (Ag) with excellent thermal conductivity have been in the spotlight, and pastes containing Ag particles have been the developed and applied. In this paper, recent studies on sinter-bonding technologies using Ag-particle-based paste, which can be classified into pressure-assisted and pressureless processes, were analyzed. The size and shape of the Ag particles, type of solvent or formulation, type of metal finish, atmosphere, and bonding temperature/time were considered, as typical process parameters. The effects of changes in the parameters on bonding results were compared and analyzed, with a focus on shear strength value and microstructure. Contrary to expectations, recently reported pressureless sinter-bonding results were found to exhibit excellent bonding properties. For example, a bonding strength approaching 35 MPa was reported for pressureless sinter-bonding at 250 ℃ for 10 min in air. The excellent bonding result can be attributed to the use of an optimal solvent during the preparation of the paste.
Keywords: Sinter-bonding | Die-attach | Ag paste | Power device | Wide bandgap semiconductor
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